杨超
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工程师
- 性别：男
- 毕业院校：大连理工大学
- 学位：博士
- 所在单位：物理学院
- 电子邮箱：03517e4ee26d75110b936fbcd189fc84161eb863feb9b298d30f020982e3da08507a4e41ca65f695a40bac7a750dcc0bd0ea55fc4d71d2b12a1e152d549f2676f4ed992f3a823e5ad3b06b2c9e059c4dee34cd8a8b3869efef78b7d35c5c781e7f76d6dcdb72b9b51ee8ea82f6d409227b2707acfcafe7c31a5e9bea6acfd47b
访问量：
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[1]张炳烨.杨超,刘维峰,刘爱民.Origin of breakdown mechanism in multicrystalline silicon solar cells[J],APPLIED PHYSICS LETTERS,2022,101(9)
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[2]张炳烨.杨超,刘维峰,刘爱民.Response to "Comment on 'Origin of breakdown mechanism in multicrystalline silicon solar cells'" [Appl. Phys. Lett. 102, 246101 (2013)][J],APPLIED PHYSICS LETTERS,2022,102(24)
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[3]杨超.杜国同,梁红伟,张振中,夏晓川,陶鹏程,Chen, Yuanpeng,张贺秋,申人升,骆英民.Self-powered SBD solar-blind photodetector fabricated on the single crystal of beta-Ga2O3[J],RSC Advances,2022,8(12):6341-6345
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[4]夏晓川.梁红伟,Geng, Xinlei,Chen, Yuanpeng,杨超,柳阳,申人升,Xu, Mengxiang,杜国同.Synthesis of GaN network by nitridation of hexagonal epsilon-Ga2O3 film[J],JOURNAL OF MATERIALS SCIENCE MATERIALS IN ELECTRONICS,2022,28(3):2598-2601
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[5]陶鹏程.骆英民,Zhang, Yuantao,杜国同,梁红伟,夏晓川,Chen, Yuanpeng,杨超,Liu, Jianxun,Zhu, Zhifu,柳阳,申人升.Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2022,41:291-296
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[6]张克雄.骆英民,杜国同,梁红伟,柳阳,申人升,Guo, Wenping,Wang, Dongsheng,夏晓川,陶鹏程,杨超.Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate[J],Scientific Reports,2022,4:6322